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The properties of various mHEMT technologies and their advantages for millimeter-wave (mmW) power amplification are presented. An experimental determination of the most suitable transistor technology (i.e. gate-length), transistor size (i.e. number of gate-fingers and gate-width) and transistor bias is taken. The advantages of the different technologies are pointed out. The most suitable combination...
A millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 135 and 155 GHz is presented. The D-band power amplifier, realized in a 100 nm gate length metamorphic high electron mobility transistor technology, employs a three-stage design with four parallel transistors in the output stage. At 144 GHz and under 1-dB gain compression, the amplifier achieves...
A millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 186 and 212 GHz is presented. The amplifier, dedicated to high-resolution imaging radar and communication systems, is realized in a 100 nm gate length metamorphic high electron mobility transistor technology. The three-stage design with four parallel transistors in the output stage achieves a linear...
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