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Intrinsic microcrystalline silicon (/spl mu/c-Si:H) grown by SiH/sub 4/-H/sub 2/ plasma at different growth temperatures have been applied to superstrate-type p-i-n solar cells in order to investigate effect of i-layer growth temperature (T/sub s/) on p/i interface properties. Although high quality /spl mu/c-Si:H films (low defect density and large grain size) are obtained at T/sub s//spl sim/250/spl...
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