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This letter presents details of high-performance enhancement-mode GaN MIS high-electron-mobility transistor (MIS-HEMT) devices. Devices with an n-GaN/i-AlN/n-GaN triple cap layer, a recessed-gate structure, and high- k gate dielectrics show high drain current and complete enhancement-mode operation. The maximum drain current and threshold voltage (Vth) are 800 mA/mm and +3 V, respectively. These...
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