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The epitaxial quality of AlN grown on sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) is improved upon the incorporation of nanometer‐thin amorphous Al2O3 interlayer by atomic layer deposition (ALD). The critical ALD‐Al2O3 thickness is determined to be around 1 nm, where the AlN exhibits a parallel step‐and‐terrace surface morphology. However, with increasing ALD‐Al2O3 thickness, the...
High‐crystalline quality AlN layers with an atomically flat surface are grown on (0001) sapphire and 6H‐SiC substrates by metal‐organic vapor phase epitaxy at 1400 °C without low‐temperature buffer layer. The polar direction of AlN layers is investigated by coaxial impact‐collision ion scattering spectroscopy (CAICISS). For AlN growth on sapphire substrate, trimethylaluminum (TMAl) is supplied for...
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