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The insertion of mobile ions and coupled changes of electron concentration are exploited to induce a non-volatile and reversible change of the optical properties of mixed ionic and electronic conductors (MIECs). The physical mechanisms responsible for the change of the real and imaginary part of the MIECs' refractive index upon ion-intercalation are extensively investigated in the visible and near-IR...
The CLIPP technology enabling non-invasive on-chip monitoring of the light intensity is exploited to realize feedback controlled schemes for the tuning, switching, and locking of photonic integrated circuits. Applications to photonic architectures based on silicon photonic microring resonators and Mach-Zehnder Interferometers are presented.
A novel silicon photonics filter enabling single-channel-extraction over a wavelength range wider than the telecom C-band is proposed. An extraction bandwidth of only 15 GHz is demonstrated with off-band rejection of more than 15 dB.
The development of highly non-linear silicon devices is a fundamental step towards the realization of low power optical signal processing devices. In order to achieve this final goal several constraints have to be overcome. In particular, the next generation of opto-electronic integrated devices must be ultra-compact, compatible with foundry model fabrication processing and exhibit low power consumption...
A high sensitivity in-band OSNR monitor system integrated on SOI platform is presented. The device exploits a narrow-band microring resonator to select the portion of the channel spectrum that is most sensitive to OSNR variations, and performs an autocorrelation measurement using a Mach-Zehnder interferometer. The proposed scheme allows in-line OSNR monitoring from 8 dB to 28 dB, with 0.2 dB accuracy.
Non-invasive monitoring of silicon microring resonators is demonstrated through a novel contactless integrated photonic probe, which enables multi-point light observation on chip and proves its utility for the tuning and control of photonic integrated devices.
Non-perturbative on-chip light observation is achieved in silicon photonics waveguides by a novel integrated photonic probe. Light intensity monitoring is performed over 40 dB dynamic range, −30 dBm sensitivity, and microsecond scale time response.
It is proposed to control the beam quality of broad-area semiconductor devices by two-dimensional structuring enforcing phase coherence across the device. First results based on MMI couplers are presented.
Progresses in design, realization and management of passive, tunable and reconfigurable silicon photonics circuits are reported. The need for a control layer with suitable probes, control strategies, signal monitoring and actuators is discussed.
This work presents an overview of a combined experimental and theoretical analysis on passive mode-locking in semiconductor quantum-well lasers based on reverse biased saturable absorbers. The experimental results describe the dynamics of laser diodes based on Aluminum quaternary materials at 1550 nm and we will also mention recent results related to GaAs Lasers at 830 nm. The experimental facts evidenced...
For applications in light modulation, biosensing and optical non-linearities on a silicon photonic platform, it is often advantageous to guide the modal power in the lower index cladding material whose properties are tailored for that particular application[ 1,2]. A convenient way of integrating such a scheme is the use of silicon slot waveguides, where two parallel rails, separated by a lower index...
A wide number of applications, such as THz signal generation, ultrafast optical clocking and next generation optical communication systems require high repetition rate optical pulses. Passively mode-locked semiconductor lasers using saturable absorbers (SAs) in a Fabry-Pérot configuration are excellent candidates, providing high-quality pulse trains in a very compact device [1]. The technical difficulties...
Optical isolators based on non-reciprocal optical elements are crucial to protect laser sources from unwanted back-reflections. Commercial optical isolators are built using bulk components and micro-optics technology, and contribute a large fraction of the overall manufacturing cost of a telecom laser. Despite the impressive development in photonic integration techniques, the integration of non-reciprocal...
Micro-ring resonators in silicon photonic circuits have been widely studied and implemented in systems for biosensing [1], telecommunications [2] and generation of photon pairs for quantum optics experiments [3]. The resonator Q-factor, defined by the roundtrip loss and coupling coefficient, is typically a static property of the device realised in the design stage. In this work a method by which to...
Silicon photonics is a well established platform for the development of fully integrated optical devices for optical communication systems. In particular, the strong modal confinement typical of silicon waveguides enables the exploitation of nonlinear effects with much lower optical power levels. Different structures for all-optical signal processing have been reported in the last years, such as all...
Generation of stable and tunable mm-wave and THz signals is extremely attractive for applications including tomography, gas sensing and imaging for security systems. Currently photonic methods for generating signals at these frequencies show either very limited tunability, as in the case of passively mode-locked lasers and THz quantum cascade lasers [1], or poor spectral purity, evinced in the photomixing...
Narrow-gap antimonide-based semiconductors provide great flexibility for band engineering with their bandgap being adjustable in a wide range to achieve emission in the mid-wave infrared spectral region (λ ∼3–5μm). Despite the rapid development of light-emitting diode (LED) technology over the last few years, the poor extraction efficiency severely limits the device power performance in the mid-infrared...
This paper demonstrates the measurements of direct modulation bandwidth of a bistable racetrack semiconductor ring laser. It is exhibited using the phenomenon of optical injection-locking in the master-slave layout. Semiconductor ring laser is employed as the slave laser. Modulated signal is injected at 1530 nm, which is about 20nm away from the main lasing mode. The frequency response of the main...
Evanescent-coupling-induced group velocity dispersion (GVD) in a subwavelength silicon directional coupler is observed to significantly modify four-wave-mixing (FWM) spectra. As the separation between two silicon wires decreases, the increasing dispersion gradually suppresses the FWM gain.
We experimentally and theoretically study two semiconductor ring lasers coupled by a single bus waveguide. We report on the locking behavior of the rings and on the destabilization of locked operation for large coupling strengths.
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