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This work presents an overview of a combined experimental and theoretical analysis on passive mode-locking in semiconductor quantum-well lasers based on reverse biased saturable absorbers. The experimental results describe the dynamics of laser diodes based on Aluminum quaternary materials at 1550 nm and we will also mention recent results related to GaAs Lasers at 830 nm. The experimental facts evidenced...
We demonstrate electrically-pumped room-temperature continuous-wave lasing in InP-based micro-disc lasers with threshold current of 6.5mA. A non-concentric hole inside the disc is used to extract the light and control the lasing mode.
We study the Mode-Locking dynamics of 40-GHz semiconductor Fabry-Pérot lasers with intracavity saturable absorber by using a Traveling-Wave-Model and a time-domain response of the semiconductor material. We analyze the influence of key parameters and compare our predictions with experimental results.
We have developed a comprehensive theoretical description of passive mode-locked semiconductor lasers based on a coarse-grained time-domain approach. The results are compared with the performance of a passively mode-locked AlGaInAs strained quantum well lasers.
In recent years semiconductor ring lasers (SRLs) have attracted interest for their diverse potential application, e.g. their fast directional bistability recently opened up a new scenario for the development of all- optical memories and signal processing. Besides, SRLs show unexpected dynamical behaviors, such as hysteresis in the lasing direction, and peculiar lasing mode selection rules. In this...
Semiconductor ring lasers (SRLs) are a particular class of lasers whose cavity has a circular geometry. From a theoretical point of view, SRL attracted interest due to their intrinsic Z2 symmetry; on the other hand, the bistability between two counter-rotating modes makes SRLs ideal candidates to efficiently store bits of information in an all-optical way [1,2].
We develop a comprehensive theoretical description of passive mode-locked semiconductor lasers based on a coarse grained time-domain approach. Under the approximation of intraband quasi equilibrium, our model accounts for the dispersion of gain, absorption and refractive index, nonlinear gain saturation from ultrafast processes, self-phase modulation, and spontaneous emission noise. We compare the...
We have experimentally and theoretically analyzed the modal properties of semiconductor ring lasers and the wavelength jumps that occur in connection with directional switching above threshold.
Wavelength and directional hysteresis due to increasing and decreasing current and temperature have been investigated. Measurements indicate that lasing direction hysteresis associated with changes in injection current can be attributed to the resulting shift in the linear gain peak which is due to the change in device temperature. Interaction between the linear gain spectrum and the asymmetric nonlinear...
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