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The potentials of using silicon–germanium dots as stressor material in MOSFETs are evaluated with respect to integration in today’s production processes. Work is reviewed that has lead to the fabrication of the first experimental n-channel MOSFETs on SiGe dots, referred to as DotFETs, in a low-complexity, custom-made low-temperature process where the dot is preserved during the entire device processing...
For the first time it was possible to obtain a current gain increase to more than 0 dB at frequencies beyond the transit frequency f T by use of an SiGe resonance phase transistor (RPT). This was achieved by using a very thick base layer with a graded high content Ge profile and a thick low doped collector to get a large phase delay in the carrier drift and a delayed injection. Based on these...
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