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To achieve an ultra-shallow junction formation with low resistivity, Cluster Carbon (CC) co-implantation for NMOS source drain and source drain extension condition are investigated. It is found that using CC co-implantation, Phosphorus (P) TED was suppressed and the lower junction depth Xj is achieved. The sheet resistivity Rs is increased with the increment of the Carbon dose, but the Rs×Xj product...
A method of choosing a coupled pair of a doping process and an annealing process that is optimized on the basis of the Rs·xj figure of merit. Differential Hall effect evaluations are used to measure 1/μdef, the defect scatter contribution to the mobility. Supressing 1/μdef leads to optimization of the doping process-annealing process couple.
Cluster C implantation at low temperature has been studied in terms of amorphous Si (a-Si) formation and elimination of B implanted induced end of range defects (EORDs). Thickness of a-Si can be controlled by C equivalent energy and dose. Monomer C never creates a-Si layer at less than 1E15/ cm2 at 25°C implant. Dose increase and temperature decrease starts to create a-Si layer. On the other hand,...
Boron retained dose and carrier activation after spike RTA in Cluster B18+ (Octadecaborane : B18H11+) implanted Si have been investigated comparing with BF2 beamline implanted Si. The retained dose estimated by SIMS depth profile integration is higher in B18 samples. In the same implant set dose, carrier concentrations in B18 samples show almost twice compared with BF2 samples although mobilities...
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