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Cluster C implantation at low temperature has been studied in terms of amorphous Si (a-Si) formation and elimination of B implanted induced end of range defects (EORDs). Thickness of a-Si can be controlled by C equivalent energy and dose. Monomer C never creates a-Si layer at less than 1E15/ cm2 at 25°C implant. Dose increase and temperature decrease starts to create a-Si layer. On the other hand,...
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