The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Threading dislocations have been studied by means of etch pit method using molten KOH + Na2O2 solution, cathodoluminescence and transmission electron microscopy. We focus on the geometrical features of etch pits and their correlation with the recombination behavior at the dislocations. Four types of etch pits can be recognized after etching according to their sizes and depths, among which the middle-sized...
Semipolar {11‐22} plane GaN layer was grown using a SiNx intermediate layer by hydride vapor phase epitaxy (HVPE). By optimizing the deposition time of the SiNx intermediate layer, the dislocation density decreased compared to that of a conventional {11‐22} GaN layer. The reduction in the dislocation density was due to three dimensional regrowth of the {11‐22} GaN layer at the interface. However,...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.