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3D stacking technologies are electrically studied to predict high speed data transmission for memory on logic applications. Maximal frequency of bandwidth for memory-processor and processor-BGA channels are extracted and compared for Face to Face and Face to Back 3D stacking and between an interposer technology. Using expected electrical specifications of Wide IO applications in terms of data rates,...
Evaluation of Through Silicon Via (TSV) electrical parameters is mandatory to improve heterogeneous 3D chip performance in the frame of a “more than Moore” roadmap. Accurate modeling of TSV is consequently essential to perform design, material and process optimizations. This paper presents a frequency dependent analytical model including MOS effect of high aspect ratio TSV achieved in a full CMOS...
Through silicon via (TSV) is considered today as the third dimension interconnect opening new perspectives in term of 3D integration. Design, material and process recommendations are required to achieve 3D stacked dies and evaluate electrical performance of such chips. As a consequence, equivalent models of this incontrovertible key component become more and more mandatory. In this paper, a full parametric...
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