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We report the formation of site-controlled InAs quantum dots (QDs) on InP pyramids and their integration into planar structures by metalorganic vapor-phase epitaxy. The QD number is reduced by the shrinking pyramid size during growth. Finally the emission from a single QD is observed at 1.55 μm, after optimization of the growth parameters. Employing regrowth epitaxy, position-controlled InAs QDs are...
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