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We measured the drain bias stress effects in normally off mode AlGaN/GaN (JHFETs) with a p‐GaN gate, whose AlGaN barrier was exposed to air by dry etching. A large current collapse and a memory effect decreased the drain current (IDS). IDS of an unpassivated sample became the off leakage level of normally off mode JHFETs at a drain stress bias of 15 V. On the other hand, IDS in SiN‐passivated JHFETs...
We have performed a growth technique that involves isoelectronic In-doping into GaN and AlGaN in order to reduce defects. The films were grown by atmospheric metalorganic vapor-phase epitaxy (MOVPE) at 950 o C in a H 2 or N 2 carrier gas (denoted below by H 2 -(Al)GaN and N 2 -(Al)GaN, respectively) with a low-temperature-deposited AlN buffer layer. By using...
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