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Epitaxial structures of AlGaN channel high electron mobility transistors (HEMTs) were grown on sapphire and AlN substrates. Reduction in the full width at half maximum of X‐ray rocking curve for (10‐12) peak of the AlGaN channel layer owing to the reduction of threading dislocation densities resulted in a sharp decrease in the sheet resistance of 2‐dimensional electron gas (2DEG). In the case of AlGaN...
We demonstrated activation annealing of Mg‐doped p‐type Al0.17Ga0.83N in different gases. The hole concentration of Al0.17Ga0.83N annealed in oxygen is higher than that annealed in nitrogen or air. A hole concentration of 1.3 × 1016 cm−3 at room temperature was achieved by annealing in oxygen flow at 900 °C. Secondary ion mass spectroscopy shows that hydrogen dissociation from Mg‐doped Al0.17Ga0.83...
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