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Gate semi-around silicon nanowire (SiNW) FETs have been fabricated and their electrical characteristics, especially on the drivability, have been assessed for future high performance devices. Among different wire size, a SiNW FET with a cross-section of 12 × 19 nm2 has shown an improvement in the on-current (ION) when normalized by the channel peripheral length. A high ION over 1600 μA/μm at an overdrive...
We investigated conductivity variations of hydrogenated amorphous silicon thin films during 10 MeV proton irradiations at fluences of 2.0×1013 or 4.0×1014 /cm2 and for certain duration after stopping the irradiations. During the irradiation the conductivity initially increases and after the certain period of irradiation, it decreases. We also investigated behaviors of light-induced degradations before...
Silicon Nanowire (Si NW) FETs with semi gate-around structures suitable for integration were fabricated using conventional planar CMOS processes. With the use of SiO2 pedestal and SiN sidewalls, lithography and etching steps over NW can be easily processed. A large on-current of 49.6 muA at Vg- Vth=1.0 V has been obtained. This value is one of the highest current per nanowire, even though the gate...
We investigated photoconductivity (PC) variations of hydrogenated amorphous silicon (a-Si:H) thin films irradiated with 0.10, 1.0 or 10 MeV protons. As a result, the PC values for all samples once increased and then decreased dramatically. Light-soaking treatment doesn't affect the anomalous PC increment. In order to obtain the knowledge about the anomalous PC increment, dark current was monitored...
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