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A single-chip broadband CMOS receiver front-end, integrating a low-noise amplifier (LNA), a correlator and a template pulse generator, was investigated in non-sinusoidal time-domain environment for possible use as a carrierless ultra-wideband (UWB) receiver front-end. Particularly, the CMOS LNA and the multiplier making up the core component of the correlator were designed, fabricated and tested to...
An ultra-wideband (UWB) distributed amplifier implementing high-gain, low-power-consumption gain-cells is presented. The distributed amplifier was fabricated in TSMC 0.18-mum CMOS process and achieved an average power gain of around 10 dB, input return loss of less than -20 dB, and noise figure of 3.3-6.1 dB with a power consumption of only 19.6 mW over the entire UWB range of 3.1-10.6 GHz. In the...
A new microstrip ring hybrid has been developed in Ka-band (26.5-40 GHz) using multiple metal layers in a standard 0.25-mum RF/mixed signal CMOS process. The developed ring hybrid has -3.1 to -3.18 dB through, -5.1 to -5.7 dB coupling, and more than 17 dB isolation and 10 dB return loss across 25-35 GHz while occupying merely 282 times 314 mum.
A novel multilayered vertically integrated inductor structure is developed for miniature CMOS RF integrated circuits, and its properties are investigated. The effect of mutual inductance both within and between adjacent multilayer inductors is also studied. A distributed low noise amplifier is designed by incorporating this novel inductor structure in a standard JAZZ 0.18-mum RF/mixed signal CMOS...
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