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A novel 1500°C gate oxidation process has been demonstrated on Si face of 4H-SiC. Lateral channel metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this process have a maximum field effect mobility of approximately 40 cm\({}^{2}\) V\({}^{-} {}^{1}\) s\({}^{-} {}^{1}\) without post oxidation passivation. This is substantially higher than other reports of MOSFETs with...
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