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We demonstrate high current operation of an evanescently coupled Ge waveguide n-i-p photodetector grown on top of a Si rib waveguide. A 7.4 μm × 500 μm device was found to dissipate 1.003 W of power (125.49 mA at -8 V). 2-D thermal simulations of the device show that the relatively high thermal conductivities of the intrinsic Ge region and the p+ doped Si layer result in efficient heat transfer and...
We present microwave characteristics of evanescently coupled Ge waveguide photodetectors grown on Si rib waveguides. At 1 GHz and 40 mA of photocurrent, an OIP3 of 36.49 dBm is measured. Additionally, the maximum RF power extracted at 1 GHz is 14.35 dBm at 60 mA of photocurrent and 8 V reverse bias.
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