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Throughout the 22nm technology node HfO 2 is established as a reliable gate dielectric in contemporary complementary metal oxide semiconductor (CMOS) technology. The working principle of ferroelectric field effect transistors FeFET has also been demonstrated for some time for dielectric materials like Pb[Zr x Ti 1−x ]O 3 and SrBi 2 Ta 2 O 9...
Throughout the 22 nm technology node HfO2 is established as a reliable gate dielectric in contemporary complementary metal oxide semiconductor (CMOS) technology. The working principle of ferroelectric field effect transistors FeFET has also been demonstrated for some time, for dielectric materials like PZT and SrBi2Ta2O9. However, integrating these into contemporary downscaled CMOS technology nodes...
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