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This contribution presents a full chip set dedicated to high data rate indoor wireless communication at a carrier frequency of 300 GHz. The analog frontend consists of a three-chip solution, namely a transmitter, receiver and local oscillator frequency multiplier. The active millimeter-wave monolithic integrated circuits are realized in a GaAs-based metamorphic high electron mobility transistor technology...
In this paper, the feasibility of transmitting and receiving complex modulated data signals with different modulation formats in a superheterodyne system setup, using a 220 GHz wireless link based on millimeter-wave monolithic integrated circuits (MMIC), is shown. It was possible to transmit an 8PSK modulated signal over a distance of 2.8 m with an error vector magnitude (EVM) of 10.7%, resulting...
Wireless transmission of DVB-C television signals with up to 256-QAM modulation at an RF frequency of 220 GHz is presented. The RF frontend is employing active single-chip transmit and receive MMICs, realized in 50 nm metamorphic HEMT technology, and packaged into compact waveguide modules. Their LO signal of 10 dBm is applied at the subharmonic frequency of 110 GHz. The transmitter module achieves...
The design and performance of millimeter-wave monolithic integrated circuits implementing active balanced frequency multipliers for the W-band (75–110 GHz) is presented. The multipliers by eight and twelve are realized in a 100 nm gatelength metamorphic high electron mobility transistor technology. A novel circuit architecture using a cascade of active balanced frequency doubler and tripler stages...
This paper presents the design and performance of a 200 GHz, sub-harmonically-pumped, heterodyne receiver MMIC realized in 100 nm metamorphic HEMT technology. The lownoise amplifier stage sets the receiver noise figure to 7 dB and, in combination with the resistive down-conversion mixer, allows for an overall conversion gain of 7 dB at 200 GHz RF frequency. The mixer LO port is driven by a frequency...
We demonstrate the first active mixer monolithic microwave integrated circuit (MMIC) with positive conversion gain beyond 200 GHz. The presented dual-gate topology is realized in a 100 nm gate length metamorphic high electron mobility transistor technology. Without any pre- or post-amplification, the down-conversion mixer achieves > 2 dB conversion gain and > 16 dB local oscillation to radio...
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