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Metamorphic high electron mobility transistor (mHEMT) technologies with 50 and 35 nm gate length were developed for the fabrication of submillimeter-wave monolithic integrated circuits (S-MMICs) operating at 300 GHz and beyond. Heterostructures with very high electron sheet density of 6.1×1012 cm-2 and 9800 cm2/Vs electron mobility were grown on 4” GaAs substrates using a graded quaternary InAlGaAs...
A novel balanced 210 GHz mixer MMIC with a measured IF bandwidth of more than 50 GHz and an RF bandwidth of more than 100 GHz has been successfully developed in a 50 nm mHEMT technology. The mixer achieves a measured conversion loss of 17 dB. The measured LO-to-RF isolation is better than 17 dB in the relevant frequency range. Two Lange couplers are used to balance the design. The IF signal is tapped...
A wideband 260 to 304 GHz (H-band) heterodyne receiver is formed by an MMIC chip set cascading a low-noise amplifier, resistive mixer with integrated frequency-doubler, LO power amplifier and frequency-multiplier-by-six. All MMICs use active circuit concepts and are realized in 100 and 50 nm gate-length metamorphic HEMT technology. The balanced active frequency-multiplier-by-six provides 0 dBm of...
This paper presents two low-noise amplifiers in D-band (110-170 GHz) using metamorphic high electron mobility transistor (mHEMT) technology with gate lengths of 100 nm and 50 nm for applications in passive millimeter-wave imaging. Both amplifiers consist of four transistor stages with a gate width of 2 × 15 μm, each. The chip sizes are 1.0 × 2.0 mm2. The circuit design and the impedance matching networks...
Different noise sources in HEMTs are discussed, and state-of-the-art low-noise amplifiers based on the Fraunhofer IAF 100 nm and 50 nm gate length metamorphic HEMT (mHEMT) process are presented. These mHEMT technology feature an extrinsic fT of 220 / 375 GHz and an extrinsic transconduction gm,max of 1300 / 1800 mS/mm. By using the 50 nm technology several low-noise amplifier MMICs were realized...
In this paper, we present the development of advanced millimeter-wave and submillimeter-wave monolithic integrated circuits for use in active and passive high-resolution imaging systems operating beyond 200 GHz. A 210 GHz subharmonically pumped dual-gate field-effect transistor (FET) mixer has been successfully realized using our 100 nm InAlAs/InGaAs based depletion-type metamorphic high electron...
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