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We have proposed a super steep Subthreshold Slope (SS) “PN-Body Tied SOI-FET”. It shows the super steep SS (∼ 35 μ V/dec) over 3 to 5 decades of the drain current with an ultra-low drain voltage down to 0.1V. We have also improved it to reduce the operating body voltage below 1V and have clarified that the floating body effect of the SOI is a key mechanism for appearance of a super steep SS. The research...
It was demonstrated that the body bias appearing the super steep Subthreshold Slope (SS) reduces from over 5V to below 1V on the PN-body tied SOIFET's which show the super steep SS with the ultralow drain voltage of 0.1V, when the impurity concentration of the N region on the body tied area is redesigned from the high concentration of the N+ to the low N−. The 3D device simulations also confirmed...
Super steep subthreshold slope characteristics in the FB and the BT are investigated with TCAD. The mechanism of the enhanced DIBL and the addition of the positive feedback PBT action by the forward biased emitter-base voltage are proposed to explain the difference between the FB and the BT.
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