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Epitaxial GaN layers with a-, c- and m-plane surface orientations were implanted with 300 keV Ar-ions at 15 K with fluences ranging from 2 × 1012 to 4 × 1016 at/cm2. Damage build-up proceeds in three steps separated by wide fluence regions where the maximum damage level, measured by in situ Rutherford Backscattering Spectrometry/Channelling, saturates. The three steps occur at similar fluences for...
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