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A novel circuit structure of a common-gate single-stage low-noise amplifier (LNA) has been proposed in this work. The LNA has been designed for Ku-Band (12 to 18 GHz) applications using the TSMC 0.18-μm CMOS process. New analytical expressions have been derived for the noise factor of a common-gate LNA. A minimum noise figure (NF) of 4.86 dB and a maximum S21 of 10.55 dB has been obtained for the...
In this work, a novel integrated Doherty power amplifier in 0.18 mum CMOS process is presented for potential WiMax applications at 3.5 GHz. Doherty configuration with cascode transistors is adopted to achieve high efficiency and output power. The integrated diode linearizer is first demonstrated to use on the cascode transistor to improve the linearity of Doherty PA. The proposed power amplifier provides...
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