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A two terminal nanoscale device showing inherent stochastic behavior can be a key enabler for a wide range of applications such as stochastic computing, machine learning and neuromorphic engineering. In this article we investigate the inherent stochasticity associated with two key attributes of phase-change memory devices, namely, threshold switching and memory switching. The physical origin of this...
We survey progress in the PCM field over the past five years, ranging from large-scale PCM demonstrations to materials improvements for high–temperature retention and faster switching. Both materials and new cell designs that support lower-power switching are discussed, as well as higher reliability for long cycling endurance. Two paths towards higher density are discussed: through 3D integration...
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