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AlGaN/GaN polarization-doped field-effect transistors (PolFETs) were fabricated on the graded AlGaN/GaN heterojunctions grown by metal organic chemical vapor deposition, and the trap behaviors were first systemically evaluated by frequency-dependent conductance–voltage characterizations. It was found that there was no obvious effective traps accumulation in the graded AlGaN/GaN heterojunctions of...
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