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Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) is regarded as an attractive replacement for Si insulated gate bipolar transistor (IGBT) in high-power density applications due to its high switching speed and low switching loss. However, to fully utilise these benefits, the gate driver of the SiC MOSFET needs to be optimised to meet its special driving requirements...
This paper evaluates different passive filter topologies of the grid-connected high power density converter (HPDC) for the purpose power quality control and electromagnetic interference (EMI) reduction. The harmonics generated by the switching circuits in the HPDC affect power quality at lower frequency as well as EMI at higher frequency. Various common passive filter topologies are carefully evaluated...
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