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We have investigated finite element method (FEM) modeling of thermal stress analysis in a SiC power module using sintering Ag die-attach, and explored the reliability focusing on the initial cracking point caused by the thermal stress. The analysis results by FEM models support our experimental observations in the reliability tests of the fabricated modules, confirming that using direct-bonded-copper...
We studied the thermal fatigue behavior of submicron silicon carbide particle (SiCp)-doped silver (Ag) microflake sinter joints for die attachment in next-generation power devices. Si dummy chips and direct bonded copper substrates with various metallization schemes were bonded using SiCp-doped Ag microflakes under mild conditions (250°C, 30 min, 0.4 MPa). The SiCp was distributed homogeneously in...
In terms of die-attach for high TJ device, metallization on the backside of the bare chip and the substrate surface affect the high-temperature reliability of the joint due to the accelerated atomic diffusions. We evaluated two types of electroless plated metallization schemes which are Ni/Ag and Ni/Pd/Pt/Ag, respectively. High temperature storage of 250 °C for 500 h was used to test the high temperature...
The mechanical properties of sintered porous Ag-paste are investigated by tension test and shear test in the temperature range from 25 °C to 300°C. Stress-strain curves of sintered porous Ag-paste are measured at different temperatures. The Poisson's ratio, which is calculated by Young's modulus and shear modulus, decreased from 0.31 at 25 °C to 0.11 at 300 °C. In addition, 3D finite element model...
Low temperature and low pressure sintering Ag paste composed by sub-micro Ag particle and organic solvent was presented. The apparent improvement of bonding strength was realized by adding small amount of nano thickness Ag flake. Optimum proportion of sub-micro particle and nano thickness flake was determined. Nano-SiC particles were added into the optimized paste for sake of the possibility of properties...
The developments of SiC power devices have been dramatically advanced for the last several years, and are gaining much attention as a key technology for the low carbon society. These SiC power devices are expected to work under the high temperature condition of 250–300 °C because of the wide band-gap energy and the high heat resistance. To meet the high temperature operations, the die-bonding materials...
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