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The developments of SiC power devices have been dramatically advanced for the last several years, and are gaining much attention as a key technology for the low carbon society. These SiC power devices are expected to work under the high temperature condition of 250–300 °C because of the wide band-gap energy and the high heat resistance. To meet the high temperature operations, the die-bonding materials...
Die-bonding for a nitride light-emitting diode (LED) by sintering of micrometer size Ag particles in air at 200°C was investigated. Micrometer size Ag particles absorb oxygen remarkably well at 200°C and above, and on sintering, they form a porous layer. The activating temperature of the sintering is in good agreement with the oxygen adsorption temperature. Sintering does not progress in the absence...
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