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The drift of drain current ($I_{D})$ in silicon nanowire field-effect transistor sensors is analyzed under various conditions of pHs and liquid gate voltages ($V_{LG})$ . It is found that H+ penetration into Helmholtz layer or sensing insulator is the cause of the current drift. To suppress the drift, a novel and fast measurement method with a two-step $V_{LG}$ is proposed and demonstrated. The...
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