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This paper presents a symmetrical small signal model for GaN HEMTs valid for both positive and negative Vds. The model takes advantage of the intrinsic symmetry of the devices typically used for switches. The parameters of the model are extracted using a new symmetrical optimization based extraction method, optimizing simultaneously for both positive and negative drain-source bias points. This ensures...
This paper presents a new radio frequency power amplifier behavioral model that is capable of modeling long term memory effects. The proposed model is derived by assuming linear dependence of the parameters of a conventional model to a long term memory parameter, which enables the model to better track the signal-induced changes of the power amplifier electrical behavior. The model is experimentally...
A switched behavioral model considering memory effects with a special focus on “difficult” amplifier architectures is proposed in this paper. The proposed model is shown to be very low-complex and linearly identifiable. A digital predistorter based on the proposed model is implemented for a 100-W 2.6-GHz Doherty power amplifier that has been considered difficult in other reports, and it is shown that...
In this paper efficient computer implementations of some of the most commonly used Volterra series based power amplifier behavioral models are proposed. The desired efficiency is in regard to algorithm complexity and floating point operations. Finally a comparative overview of the different behavioral models with respect to their complexity is presented.
We propose a framework for complexity analysis of Volterra series and derivatives thereof, and formulate a constrained Volterra-based series aimed at reducing computational complexity.
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