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A JPEG XR chip for HD-Photo is implemented with 25 mm2 area in TSMC 0.18 um CMOS 1P6M technology at 100 MHz. According to the simulation results, the 4:4:4 1920x1080 HD-Photo 20 frames/sec can be encoded smoothly.
The chemical and plasma oxidation behaviors of NiSi and NiPtSi salicide films in a 65 nm node CMOS device fabrication process have been investigated. By incorporating Pt into the nickel salicide formation process, the oxidation rate can be effectively reduced during both salicidation etch/clean and contact plasma etch processes. Data collected from this study suggests both stronger chemical bonding...
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