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To optimize the lifetime of switching power semiconductors, this paper presents improvements in the performance and coordination of a control system to regulate power device junction temperature, Tj, and its change during power cycles, ΔTj. This research proposes a ΔTj control law which closes a control loop on the rate of change state, Tj, and subsequently introduces active thermal capacitance and...
The gate drive output transient properties of conventional power semiconductors (Silicon MOSFET, Silicon-Carbide MOSFET, and Silicon IGBT) have been studied for online junction temperature (Tj) sensing. This method utilizes the semiconductor intrinsic Tj-dependent characteristics and the gate drive output dynamics. In this paper, the method is applied to Gallium Nitride (GaN) high electron mobility...
The switching transient properties of conventional power semiconductors (Silicon MOSFET and IGBT) have been proposed for online junction temperature (Tj) sensing. This method utilizes the semiconductor Tj dependent characteristics and the gate drive output dynamics. In this paper, the method is applied to wide bandgap power semiconductor, Silicon-Carbide (SiC) MOSFET. In order to demonstrate the SiC...
Switching power semiconductor online junction temperature (Tj) sensing is essential for device switching performance evaluation, device switching control, and device lifetime optimization. The contribution of this paper is a detailed evaluation of implementation issues (including circuit invasiveness, hardware integration, signal processing, and so forth) of different online Tj sensing methods. This...
Junction temperature sensing for high bandwidth power MOSFET junction temperature protection is usually achieved on the power converter's high power side, by directly monitoring the power switches with additional temperature detectors. This requires special considerations for high voltage, high current, high temperature, and EMI protection. This paper presents a new method applied on the power converter's...
Junction temperature sensing requirements for fast MOSFET junction temperature control and high power fast switching power converter protection are not easily met with non-intrusive techniques. This paper presents a non-invasive circuit model-based sensing method suitable for a high bandwidth, hard-switching converter power MOSFET junction temperature estimation without any additional temperature...
High bandwidth junction temperature measurement provides a key signal for active thermal control to improve reliability of power electronics. Recently developed isolated techniques to estimate junction temperature from the decay of turn-on ringing depending on circuit properties are not well documented in existing circuit models. This paper focuses on how to develop circuit models that are suitable...
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