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In this paper, the electrode effects on mass sensitivity of GaN thin film bulk acoustic wave resonator (FBAR) sensors have been studied. The equation of electric impedance of FBARs with structure of mass sensitive layer/electrode/GaN/electrode has been derived by one dimensional transmission line model for frequency calculation. In the simulation, to produce shear mode acoustic 2µm GaN with 42.8°...
It has been shown that pure thickness shear mode can be excited in thin film bulk acoustic wave resonators (FBARs) using AlN thin films with special c-axis tilt angles (46.1° and 90°). The pure shear mode FBARs may be used as sensors in liquid medium with improved sensitivity than the commonly used thickness shear mode quart crystal resonator. In this paper thickness shear mode FBAR has been investigated...
In this paper, the mass sensitivity of dual mode thin film bulk acoustic wave resonator (FBAR) based on ZnO film with tilted polar c-axis has been theoretically investigated. The tilted c-axis orientation induces normal plane and in-plane polarizations, which leads to the coexistence of the longitudinal mode and shear mode in the resonator. Equation for predicting electric impedance of dual mode ZnO...
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