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The growth of InPBi by molecular beam epitaxy on an InP(311)B substrate is investigated. Bi atoms are incorporated into the samples grown at or below 350 °C. A Bi concentration of up to 5% is estimated by X‐ray diffraction and secondary mass spectroscopy measurements. Although the surface roughness increased with decreasing growth temperature and at a high Bi flux, Bi atoms are found to have surfactant...
Hybrid structures of InGaAs/InAlAs two‐dimensional quantum well superlattices and self‐assembled InAs quantum dots (QD) are fabricated on an InP(311)B substrate by the digital embedding method. Samples, in which the period of the superlattice is changed, are evaluated by atomic force microscope and polarized photoluminescence (PL). The intensity of PL polarized in the [‐233] direction is found to...
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