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A high-robustness and low-capacitance clamp for on-chip electrostatic discharge (ESD) protection is developed. The low capacitance is obtained by mitigating the capacitance associated with the lightly doped n-well/p-well junction. In addition to minimizing the capacitance, the high ESD robustness is achieved by optimizing independently within the same structure a silicon-controlled rectifier and a...
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