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This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-к lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-к LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (μFE) of 6.6 cm2/V-s. The...
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