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This paper demonstrates a 180W packaged AlGaN/GaN HEMT targeted for S-band application, operating at 48V drain bias voltage. Under WCDMA (with DPD) test, the average power and drain efficiency are 35W and 33.3%. After 1000 hours HTRB test, no electrical failure of the device is observed.
A scalable non‐linear large signal model based on the ADS EE_HEMT model was developed for AlGaN/GaN HEMTs for use in linear and non‐linear circuit design. Excellent agreement between simulations and measurements was obtained for the DC, small signal and large signal power and efficiency performance including load‐pull and source‐pull contours. Excellent scalability of the model was also demonstrated...
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