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We have studied the photoassisted electron emission from a p-type silicon field emitter array under illumination of laser lights with 633 nm and 405 nm wavelengths. The increase of the emission current under light illumination is proportional to the emission current in the dark. The significant influence of the polarization in photoassisted emission for each wavelength was not observed.
To improve QE of the photocathode using surface plasmon resonance, we have employed the new arrangement of the photocathode and incident light, where the direction of the surface plasmon coincides with the momentum direction of the emitting electrons. We have achieved the QE by 103 times larger than that of the conventional photocathode using surface plasmon resonance.
To investigate mechanisms of the polarization phenomena in the CdTe radiation detectors, we used optical laser pulses for carrier generation and detected the electrical response from the CdTe detectors as a function of carrier-generation position in the detector. Temporal change of the internal electric field at defined position in the CdTe detector can be directly observed by the laser pulse measurements...
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