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Impact of heavy-ion irradiation on the TaO -based resistive random-access memory (RRAM) is investigated in this work. After Br ion irradiation, the set voltage of TaO-based RRAM shows slight change, and negative shift of the forming voltage is observed. For the resistance change of TaO-based RRAM devices induced by irradiation, the resistance of the low resistance state (LRS)...
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