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We have investigated the properties of In0.51Ga0.49N/GaN disk-in-nanowire light emitting diodes (LEDs) epitaxially grown on silicon substrates by plasma-assisted molecular beam epitaxy. The radiative efficiency of the nanowire ensemble, obtained from the temperature-dependent photoluminescence measurements, under optimized growth conditions is 43%, which increases to 55% after parylene passivation...
Temperature-dependent efficiency and differential carrier lifetimes have been measured on InGaN/GaN quantum well and quantum dot LEDs. The roles of Auger recombination and carrier leakage in LED efficiency roll-off are elucidated.
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