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The epitaxy of lattice-matched and strained semi-conducting films on patterned and misoriented substrates has led to new growth phenomena, material properties and device applications. Our work on InP- and GaAs-based heterostructures on (111)- and (311)-oriented substrates and strained heterostructures on planar and patterned (small area) substrates is described in this paper. The possibility of...
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