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We report the first observation of photoluminescence (PL) from the dilute bismide alloy GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (100) substrates and PL is obtained in the near infrared spectral range (λ∼1.6μm). Incorporation of 0.2, 0.3 and 0.4at% Bi to the layer results in a decrease of band gap energy up to 40meV as well as an increase of luminescence from...
We review here our work on the growth of dilute GaAsN, GaSbN and InAsN epitaxial layers using a novel liquid phase epitaxy technique, first developed by us. The growth melt for these materials were prepared by using either polycrystalline GaN or InN powder as the source of nitrogen for Ga-based or In-based compounds, respectively. The nitrogen content in the grown materials was obtained through various...
Dilute GaAsN layers are grown by liquid phase epitaxy (LPE) technique, using polycrystalline GaN as the source of nitrogen. A band gap lowering of 100 meV is obtained from low temperature photoluminescence (PL) measurements which correspond to a little more than 0.5% nitrogen in the layer. Using 10 K photocapacitance measurements, a 0.7 eV electron trap is detected in the material which is assigned...
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