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A X-ray photoelectron spectroscopy (XPS) study of the behaviour of sodium films deposited in ultra-high vacuum on InSe single-crystal or thin epitaxial films at room temperature and upon moderate annealings (up to 475 K) is reported. Major changes affect the substrate spectra, in particular indium, and clearly show the influence of the substrate morphology. For the InSe single-crystal substrate, annealing...
InSe/Si heterojunctions have been prepared by molecular beam deposition of an InSe epitaxial film, upon a clean 7 7-reconstructed Si(111) surface. The InSe layered semiconductor had its c-axis normal to the (111) plane of Si. These heterojunctions have been studied upon sequential thermal thinning of the InSe film under ultrahigh vacuum by low energy electron diffraction (LEED), Auger electron...
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