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Fe has been sequentially deposited under ultra-high vacuum, from less than 1 ML up to over 120 ML (1 ML refers to the GaSe surface, ~8x10 14 atoms/cm 2 ), onto the clean (001) passive face of a 10-nm thick (~12 layers) GaSe film epitaxially grown by MBE onto a Si(111)1x1-H substrate and kept at room temperature. From low-energy electron diffraction (LEED), Auger electron spectroscopy...
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