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In this paper we present a cryogenic test socket used for the quick device measurement at liquid Helium temperature. The chip under test could be easily installed inside the socket with the help of a clamp cover. Large amount of pins with 0.3mm diameter and 2.4mm length are utilized for electric contact inside the socket. Contact resistances as low as 0.2ohm are realized in a temperature range from...
We report in CPEM 2014 our latest results of the study of single quantum Hall device for the resistance standard in National Institute of Metrology, China (NIM). Experimental results indicate quantized Hall devices with satisfied longitudinal resistance, low contact resistance, and good breakdown current are obtained. Comparison of the quantum Hall resistance to a precise transfer resistance standard...
We reported the new design of quantum Hall array resistances. Two resistances, 100Ω and 1k𠄦, were achieved by series and parallel connections of single quantum Hall device based on the AlGaAs/GaAs heterostructure. The relative deviations from the nominal value were −3.42 parts of 108 for both design.
Large scale single-crystalline graphene was achieved on copper foils with CH4 as the precursor with a sandwich method. With a PMMA-assisted method, single-crystalline graphene was transferred to the marked SiO2/Si substrate. Quantum Hall devices will be fabricated by E-beam lithography and metallization. And, quantum Hall effect will be measured.
We report the fabrication and measurement of quantum Hall (QH) array devices based on GaAs/AlGaAs heterostructure in NIM. Three QH arrays, namely 2 Hall bars in series, 2 Hall bars in parallel, and 4 Hall bars in series are demonstrated. The low resolution preliminary measurement results are presented. The present resolution is limited by the measurement equipment and environment.
Wafer-scale monolayer graphene film was synthesized on Cu foils by chemical vapor deposition in a 3-in thermal furnace. Graphene film was transferred to the surface of SiO2 (300 nm)/Si substrates using a polymer-assisted method. Hall bar structures were fabricated by lithography and E-beam deposition for the electrical property measurement. Perfect symmetrical ohmic resistance distribution was achieved...
We report in CPEM 2012 the preparation of the micromechanical cleavage (MC) and the chemical vapor deposition (CVD) graphene films and the fabrication of the quantum Hall resistance (QHR) devices on these films. Graphene films are on the SiO2/Si substrates. Spectroscopic Raman analysis indicates monolayer graphene films are obtained. Hall bar structures are formed on graphene films by e-beam lithography,...
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