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We reported the new design of quantum Hall array resistances. Two resistances, 100Ω and 1k𠄦, were achieved by series and parallel connections of single quantum Hall device based on the AlGaAs/GaAs heterostructure. The relative deviations from the nominal value were −3.42 parts of 108 for both design.
We report the fabrication and measurement of quantum Hall (QH) array devices based on GaAs/AlGaAs heterostructure in NIM. Three QH arrays, namely 2 Hall bars in series, 2 Hall bars in parallel, and 4 Hall bars in series are demonstrated. The low resolution preliminary measurement results are presented. The present resolution is limited by the measurement equipment and environment.
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