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Owing to the large bandgap, breakdown electric field (Eb) and high carrier mobility, wide-bandgap semiconductor (e.g. SiC and GaN) based power devices have been extensively studied for next-generation power-switching applications [1-2]. Recently, a new wide-bandgap oxide semiconductor, gallium oxide (β-Ga2O3), has attracted attention for power-switching applications because it has an extremely large...
The III-nitride wide bandgap semiconductors show attractive and compelling potential for power electronics due to their high breakdown electric field (Ebr) as well as high carrier mobilities (μ). Previous efforts have realized GaN high power p-n diodes by traditional acceptor-donor doping.[2–4] The new polarization-induced doping technique using graded AlGaN heterostructures can improve the doping...
A novel SOI LDMOS (Lateral Double Diffused MOSfet) structure substituting the PN junction between channel region and drift region with PIN junction is presented in this paper. On-state and off-state characteristics of this device are investigated by two dimensional simulation using Dessis. This novel device has higher breakdown voltage with the same drift length compared to conventional device. The...
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