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This paper describes DC and RF characteristics of 55nm gate ion implanted GaN high electron mobility transistors (HEMTs) on sapphire and Si substrates. For DC characteristics, there is no difference in the ion implanted GaN HEMTs on a sapphire and a Si substrate, while RF characteristics are greatly influenced to substrates, especially the HEMTs on a Si substrate are influenced easily, because those...
We demonstrated electrical characteristics of operational amplifier (OPAMP) circuits fabricated by GaN/AlGaN/GaN HEMTs operating over 200 °C. GaN/AlGaN/GaN HEMTs, with the extremely low source resistance were fabricated by multiple ion implantation, precisely controlled ion‐implanted (I/I) resistors and Schottky barrier diodes were integrated on the silicon substrate. The GaN cap layer on the AlGaN...
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