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Time-resolved photoreflectance was performed simultaneously with THz radiation measurements in a series of p-doped InAl0.36Sb. Carrier decay time can be as short as 350 fs depending on the doping density, which showed correlation with THz emission features.
We have measured THz radiation from various semiconductor groups: InGaSb, GaAsSb, InAsSb, InAlSb, InSb, InAs, and InGaAs. The InAs series was the most intense radiation source whereas GaAsSb was the weakest one. In terms of the emission time, InGaAs (GaAsSb) was the fastest (slowest) material.
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